Samsung squashes 16 Flash chips into one
Multi-die stacking enhanced for cheaper MP3 players
1st November 2006 12:08 GMT
Samsung has worked out how to stack up to 16 memory dies in a single package, allowing a standard-sized chip to contain rather more storage capacity than is currently the case. A chip that might have once held 10GB of Flash memory can now hold 16GB.
Samsung's technique is to narrow the thickness of each memory wafer to 30µm, down from the 45µm thickness the wafers in the company's current ten-chip stacking process. The thinner wafers need special handling, so Samsung said it cuts them using lasers rather than the mechanical saws more commonly used for this kind of thing.

Multi-die stacking then (left) and now (right)...
The new technique uses less adhesive between each chip - the glue layer's 20µm, compared to 60µm in the ten-chip process. That means there's less space between wafers for connecting wires. To get around that, Samsung said it stacks the wafers slightly off-axis to create a gap between the edge of the lower die and the one above - room enough to connect up the wiring.
Samsung didn't say when it will be delivering chips based on the new die-stacking technique. ®


Intel Core i7 I7-920 Quad Core Processor (2.66GHz, 4x256kB, 4.8GT/s QPI, LGA 1336 Socket B)
AMD Phenom II X4 965 Black Edition Quad Core Processor (3.4GHz, 6MB L3 Cache, 4x512KB L2 Cache, 2000 MHz Bus, Socket AM3)
Intel Core i5 750 Qaud Core Processor (2.66GHz, 8MB L3 Cache, 2.5 GT/s Bus, Socket H LGA1156)
Asus P7P55D Motherboard (Intel Socket H LGA1156, P55 Express, ATX, 16GB DDR3)
Asus M4A785TD-V EVO AMD 785G/SB710 Socket AM3 ATX Motherboard